Growth and Characterization of Al(1-x)In(x)N Films and
Nanostructures
Nitrides, Epitaxy, Selfassembly and Optoelectronics
978-3-639-03028-0
3639030281
124
2008-09-10
59,00 €
eng
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The book contains experimental information of
pseudo-epitaxial growth a series of Al(1-x)In(x)N
films with thicknesses ranging from 100 nm to 8000 nm
and In concentration (x) ranging from 0 to 1 on
different substrates (Si, Sapphire, SiC glass) using
Plasma Source Molecular Beam Epitaxy (PSMBE)
techniques. Using different growth modes as the
specific film morphology, the self-assembled
nanostructures were created. The mechanism of carrier
confinement in these structures are described.
Theoretically and experimentally shown that the
electron localization may exist in the nanostructures
by piezoelectric field from AlN buffer layer.
Optical investigation of the fundamental bandgap Eg
of InxAl1-xN in the temperature range 70-700K and
compositional range (0x1), Raman, far-infrared
and luminescence properties are described. The
light-emitting spots have been observed in
temperature dependence of absorption coefficient at
2.26 eV for self-nanostructured InAlN.
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