Bookcover of 1.5 µm GaN/AlN MQWs Intersubband All-Optical Switches
Booktitle:

1.5 µm GaN/AlN MQWs Intersubband All-Optical Switches

Metalorganic Vapor Phase Epitaxy and Fabrication

LAP LAMBERT Academic Publishing (2012-07-13 )

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ISBN-13:

978-3-659-17177-2

ISBN-10:
3659171778
EAN:
9783659171772
Book language:
English
Blurb/Shorttext:
So far, a strong intersubband transition at 1.55-µm wavelength range was very difficult to achieve in GaN/AlN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE) using conventional growth method. This book first provides a general introduction to the physics of intersubband transition in GaN/AlN MQWs and its device applications especially all-optical switches operating at commutation wavelength. Later on, the issues with regard to conventional MOVPE were comprehensively discussed and analyzed. As a solution of these problems, a growth technique called “pulse-injection method” was employed to achieve intersubband absorption at 1.55-µm wavelength range. The effects of growth parameters on the properties of intersubband transition were investigated and discussed. Various types of AlN-based waveguides, including ridge, high-mesa, and spot-size converter, with GaN/AlN MQWs absorber were designed and fabricated. The saturation of intersubband absorption which determines the functionality of all-optical switch was clearly observed. This book demonstrated the potential of MOVPE-grown GaN/AlN MQWs for intersubband devices operating at communication wavelength.
Publishing house:
LAP LAMBERT Academic Publishing
Website:
https://www.lap-publishing.com/
By (author) :
Hassanet Sodabanlu
Number of pages:
220
Published on:
2012-07-13
Stock:
Available
Category:
Other
Price:
79.00 €
Keywords:
semiconductors, GaN, AlN, MOCVD, Nitride, intesubband transition, MOVPE, ISBT

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