Buchcover von Investigation on Schottky-Barrier MOSFETs for Memory Application
Buchtitel:

Investigation on Schottky-Barrier MOSFETs for Memory Application

Schottky-Barrier Flash Memory

LAP LAMBERT Academic Publishing (06.12.2010 )

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ISBN-13:

978-3-8433-7747-8

ISBN-10:
3843377472
EAN:
9783843377478
Buchsprache:
Englisch
Klappentext:
The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.
Verlag:
LAP LAMBERT Academic Publishing
Webseite:
https://www.lap-publishing.com/
von (Autor):
Sung-Jin Choi, Yang-Kyu Choi
Seitenanzahl:
100
Veröffentlicht am:
06.12.2010
Lagerbestand:
Lieferbar
Kategorie:
Maschinenbau, Fertigungstechnik
Preis:
49,00 €
Stichworte:
Schottky, MOSFET, Flash Memory, NOR Flash, Hot carrier, Channel-hot-electron- injection, FinFET, SONOS, NiSi, ErSi, PtSi, Flash memory.

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